宁波铼微半导体有限公司于2019年6月在宁波市北仑区成立。本公司整合日本、中国人才网以及中国大陆的相关团队和技术，开展氮化镓器件相关研发、应用与产业化。公司产品主要包括氮化镓微波整流器件和微波功率器件、深紫外LED（DUV LED）、蓝光和绿光半导体激光器、高功率氮化镓器件、高频氮化镓射频器件等。
公司将提供第三代半导体的材料、器件与应用模块。包括氮化镓外延片、微波与电力电子系统、深紫外LED的应用和半导体新型显示技术的解决方案。其中氮化镓外延片提供4吋、6吋的硅基碳化硅衬底，并且有高频以及高压应用的特殊结构，同时提供6吋的氮化镓流片服务。
公司精准定位于高增长、高利润的第三代半导体的器件与应用市场，引入规模生产和管理体系，汇聚拥有一流技术和产品开发经验的国际化团队，联合行业内知名上下游企业，打造一家拥有核心专利、可持续高速增长的半导体产业企业。
Ningbo Niway semiconductor Co., Ltd. was established in June 2019 in Beilun District, Ningbo. The company integrates relevant teams an d technologies from Japan, Taiwan an d mainland China to develop, apply an d industrialize gallium nitride wide bandgap semiconductor materials an d devices. The main products include gallium nitride microwave rectifier devices an d microwave power devices, deep ultraviolet LEDs （DUV LEDs）, blue an d green light semiconductor lasers，GaN high-power semiconductor an d high RF semiconductor.
The company will provide third-generation semiconductor materials, devices an d application modules. It will also GaN epitaxial wafer, provide solutions for microwave an d power electronics systems, deep UV LED applications an d new semiconductor display technologies. GaN epitaxial wafer provide 4 and 6 silicon based silicon carbide substrates with special structures for high frequency an d high pressure applications, as well as 6 gallium nitride stream services.
Company aims the high growth, high-profit market of the third-generation semiconductor devices an d their applications. By introducing scale production an d management system, together with an international group with first-class technology an d product development experience, an d jointing with the upstream an d downstream enterprises, a semiconductor industry enterprise will be built with core patents an d sustainable growth.
